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InP substrate      询价购买


2、3、4英寸磷化铟

产品介绍:

性状:沥青光泽的深灰色晶体,闪锌矿结构。

熔点:1070℃。常温下带宽(Eg=1.35 eV)。熔点下离解压为2.75MPa。

溶解性:极微溶于无机酸。

介电常数:10.8

电子迁移率:115000px2/(V·s)

空穴迁移率:3750px2/(V·s)

制备:具有半导体的特性。由金属铟和赤磷在石英管中加热反应制得。


Fe Doped InP

Semi-Insulating InP Specification

Growth MethodVGF
DopantIron (FE)
Wafer ShapeRound (DIA: 2", 3", AND 4")
Surface Orientation(100)±0.5°


*Other Orientations maybe available upon request

Resistivity ≥0.5 × 107
Mobility (cm2/V.S)≥ 1,000
Etch Pitch Density (cm2)1,500-5,000


Wafer Diameter (mm)50.8±0.376.2±0.3100±0.3
Thickness (µm)350±25625±25625±25
TTV [P/P] (µm)≤ 10≤ 10≤ 10
TTV [P/E] (µm)≤ 10≤ 15≤ 15
WARP (µm)≤ 15≤ 15≤ 15
OF (mm)17±122±132.5±1
OF / IF (mm)7±112±118±1
Polish*E/E, P/E, P/PE/E, P/E, P/PE/E, P/E, P/P

*E=Etched, P=Polished
Note: Other Specifications maybe available upon request


n- and p-type InP

Semi-conducting InP Specification

Growth MethodVGF
Dopantn-type: S, Sn AND Undoped; p-type: Zn
Wafer ShapeRound (DIA: 2", 3", AND 4")
Surface Orientation(100)±0.5°

*Other Orientations maybe available upon request

DopantS &Sn (n-type)Undoped (n-type)Zn (p-type)
Carrier Concentration (cm-3)(0.8-8) × 1018(1-10) × 1015(0.8-8) ×1018
Mobility (cm2/V.S.)(1-2.5) × 103(3-5) × 10350-100
Etch Pitch Density (cm2)100-5,000≤ 5000≤ 500


Wafer Diameter (mm)50.8±0.376.2±0.3100±0.3
Thickness (µm)350±25625±25625±25
TTV [P/P] (µm)≤ 10≤ 10≤ 10
TTV [P/E] (µm)≤ 10≤ 15≤ 15
WARP (µm)≤ 15≤ 15≤ 15
OF (mm)17±122±132.5±1
OF / IF (mm)7±112±118±1
Polish*E/E, P/E, P/PE/E, P/E, P/PE/E, P/E, P/P

*E=Etched, P=Polished
Note: Other Specifications maybe available upon request