性能参数：

• 

• Item	AlN-T-C-C50
  Dimension	Ф 50.8 ± 0.2 mm
  Thickness/Thickness STD	1-5µm±10%/<3%
  Orientation of AIN	C-plane (0001) off angle toward A-axis 0.2±0.1°
  Orientation Flat of AIN	（1-100）0±0.2°，16±1mm
  Conduction Type	Semi-Insulating
  XRD Crystal Quality	[1,2)μm	[2,3)μm	[3,4)μm	[4,5)μm
  (0002)FWHM(arcsec)	≤80	≤100	≤120	≤160
  (10-12)FWHM(arcsec)	≤650	≤550	≤450	≤400
  Structure	~1-5AIN/~20nm AIN buffer/430±25μm sapphire
  Edge Exclusion	≤2.5μm
  Through Crack	None
  Orientation of sapphire	C plane(0001) off angle toward M-axis 0.2±0.1°
  Orientation Flat of sapphire	(11-20)0±0.2°，16±1mm
  Sapphire Polish	Single side polished(SSP)/Double side polished (DSP)
  Package	Packagesd in a cleanroom in containers

  *X-ray diffraction is measured witn 0.1mm slit.